FDG6302P_Q

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FDG6302P_Q datasheet

• Маркировка
  FDG6302P_Q
• Производитель
  Fairchild Semiconductor
• Описание
  Fairchild Semiconductor FDG6302P_Q Configuration: Dual Continuous Drain Current: - 0.14 A Drain-source Breakdown Voltage: - 25 V Fall Time: 8 ns Forward Transconductance Gfs (max / Min): 0.12 S Gate-source Breakdown Voltage: - 8 V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Package / Case: SC-70-6 Power Dissipation: 0.3 W Product Category: MOSFET Resistance Drain-source Rds (on): 10 Ohms Rise Time: 8 ns Transistor Polarity: P-Channel Typical Turn-off Delay Time: 9 ns Drain-Source Breakdown Voltage: - 25 V Gate-Source Breakdown Voltage: - 8 V Resistance Drain-Source RDS (on): 10 Ohms Forward Transconductance gFS (Max / Min): 0.12 S Typical Turn-Off Delay Time: 9 ns
• Количество страниц
  13 шт.
• Форматы файла
  HTML, PDF

  (Для просмотра требуется Adobe Acrobat Reader)

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